• DocumentCode
    975216
  • Title

    Room-temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 ¿m

  • Author

    Utaka, K. ; Akiba, Shigeyuki ; Sakai, Kenji ; Matsushima, Y.

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    961
  • Lastpage
    963
  • Abstract
    Room temperature CW operation of distributed-feedback buried-heterostructure InGaAsP/InP lasers emitting at 1.57 ¿m was achieved. A DC threshold of about 250 mA at 25°C and a temperature coefficient of the lasing wavelength of 1.0 Å/°C were obtained. Some of these lasers manifested single longitudinal mode operation both in DC condition and in deeply modulated condition at 500 Mbit/s.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; 1.57 Mu m wavelength; 500 Mbit/s; DC threshold; III-V semiconductors; deeply modulated condition; distributed-feedback buried-heterostructure InGaAsP/InP lasers; single longitudinal mode operation;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810672
  • Filename
    4246156
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975216