Title :
Low threshold current CW operation of GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser emitting at 1.5¿1.6 ¿m
Author :
Tanbun-Ek, T. ; Arai, S. ; Koyama, F. ; Kishino, K. ; Yoshizawa, S. ; Watanabe, T. ; Suematsu, Y.
Author_Institution :
Tokyo Institute of Technology, Department of Physical Electronics, Tokyo, Japan
Abstract :
Low threshold current CW operation of a 1.5¿1.6 ¿m-wavelength GaInAsP/InP buried heterostructure distributed Bragg reflector integrated twin guide (BH-DBR-ITG) laser was obtained up to 12°C. Single wavelength operation was obtained at a temperature range of 25 deg. The temperature dependence of lasing wavelength was 0.10 nm/deg. At 248 K, the threshold current, the differential quantum efficiency and the maximum output power were 37 mA, 16.3%/facet and 6 mW, respectively.
Keywords :
III-V semiconductors; distributed Bragg reflector lasers; gallium arsenide; indium compounds; integrated optics; semiconductor junction lasers; 1.5 to 1.6 Mu m; GaInAsP/InP buried heterostructure distributed Bragg-reflector integrated-twin-guide laser; III-V semiconductors; differential quantum efficiency; low threshold current CW operation;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19810675
