DocumentCode
975261
Title
High-speed frequency dividers with quasi-normally-off GaAs MESFETs
Author
Damay-Kavala, F. ; Nuzillat, G. ; Arnodo, C.
Author_Institution
Thomson-CSF, Central Research Laboratory, Orsay, France
Volume
17
Issue
25
fYear
1981
Firstpage
968
Lastpage
970
Abstract
Master-slave binary frequency dividers have been designed and implemented with enhancement-mode GaAs MESFETs by using the so-called LPFL logic approach. A wide range of speed-power performances has been observed: a maximum toggle frequency of 2.8 GHz at P = 15 mW/gate on a dual-clocked frequency divider and an fc,max of 1.73 GHz at Pxtpd = 1 pJ/gate on a single-clocked one. The high-speed performance obtained corresponds to a propagation delay of 145 ps for the constituent NOR-OR gates of fan-in/fan-out = 4/3, and it is made possible by careful optimisation of circuit design parameters.
Keywords
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; III-V semiconductor; LPFL logic approach; NOR-OR gates; direct-coupled FET logic; enhancement-mode GaAs MESFETs; master-slave binary frequency dividers; propagation delay; toggle frequency;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19810676
Filename
4246160
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