• DocumentCode
    975261
  • Title

    High-speed frequency dividers with quasi-normally-off GaAs MESFETs

  • Author

    Damay-Kavala, F. ; Nuzillat, G. ; Arnodo, C.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    17
  • Issue
    25
  • fYear
    1981
  • Firstpage
    968
  • Lastpage
    970
  • Abstract
    Master-slave binary frequency dividers have been designed and implemented with enhancement-mode GaAs MESFETs by using the so-called LPFL logic approach. A wide range of speed-power performances has been observed: a maximum toggle frequency of 2.8 GHz at P = 15 mW/gate on a dual-clocked frequency divider and an fc,max of 1.73 GHz at Pxtpd = 1 pJ/gate on a single-clocked one. The high-speed performance obtained corresponds to a propagation delay of 145 ps for the constituent NOR-OR gates of fan-in/fan-out = 4/3, and it is made possible by careful optimisation of circuit design parameters.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; frequency dividers; gallium arsenide; integrated logic circuits; III-V semiconductor; LPFL logic approach; NOR-OR gates; direct-coupled FET logic; enhancement-mode GaAs MESFETs; master-slave binary frequency dividers; propagation delay; toggle frequency;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19810676
  • Filename
    4246160