Title :
Two- and three-dimensional calculation of substrate resistance
Author :
Deferm, Ludo ; Claeys, Cor ; Declerck, G.J.
Author_Institution :
IMEC, Leuven, Belgium
fDate :
3/1/1988 12:00:00 AM
Abstract :
A two- and three-dimensional solution of the Laplace equation for the calculation of the substrate resistance for rectangular contacts is presented. After the calculations are performed for a uniform substrate, an extension is given to nonuniform doped regions. This solution makes it possible to investigate the influence of buried layers and field implementations on substrate and well resistances
Keywords :
contact resistance; integrated circuit technology; semiconductor technology; surface conductivity; 2D calculation; 3D calculation; Laplace equation; buried layers; nonuniform doped regions; rectangular contacts; substrate resistance; Bipolar transistors; Boundary conditions; CMOS technology; Conductivity; Contact resistance; Current density; Laplace equations; Resistors; Substrates; Surface resistance;
Journal_Title :
Electron Devices, IEEE Transactions on
