DocumentCode
975296
Title
Two- and three-dimensional calculation of substrate resistance
Author
Deferm, Ludo ; Claeys, Cor ; Declerck, G.J.
Author_Institution
IMEC, Leuven, Belgium
Volume
35
Issue
3
fYear
1988
fDate
3/1/1988 12:00:00 AM
Firstpage
339
Lastpage
352
Abstract
A two- and three-dimensional solution of the Laplace equation for the calculation of the substrate resistance for rectangular contacts is presented. After the calculations are performed for a uniform substrate, an extension is given to nonuniform doped regions. This solution makes it possible to investigate the influence of buried layers and field implementations on substrate and well resistances
Keywords
contact resistance; integrated circuit technology; semiconductor technology; surface conductivity; 2D calculation; 3D calculation; Laplace equation; buried layers; nonuniform doped regions; rectangular contacts; substrate resistance; Bipolar transistors; Boundary conditions; CMOS technology; Conductivity; Contact resistance; Current density; Laplace equations; Resistors; Substrates; Surface resistance;
fLanguage
English
Journal_Title
Electron Devices, IEEE Transactions on
Publisher
ieee
ISSN
0018-9383
Type
jour
DOI
10.1109/16.2460
Filename
2460
Link To Document