Title :
1.3-μm strained MQW-DFB lasers with extremely low intermodulation distortion for high-speed analog transmission
Author :
Watanabe, Hiromi ; Aoyagi, Takahiro ; Takemoto, Ayumi
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo
fDate :
6/1/1996 12:00:00 AM
Abstract :
The intermodulation distortion and the noise characteristics of 1.3-μm strained multiquantum-well distributed feedback (MQW-DFB) lasers have been investigated under the modulation frequency of 1.9 GHz in connection with the device structure. In this study, a strained MQW with strain-compensated layers has been introduced in order to increase in the quantum-well number and well width. This causes increase in the differential gain, resulting in increase of the resonance frequency (FR). The FR as high as 5.1 GHz/mW1/2 has been obtained which is in good agreement with the theoretical calculation. In addition to the strained MQW structure, a new buried heterostructure entirely grown by MOCVD, named as FSBH (facet selective growth buried heterostructure), has been developed to minimize the leakage current which degrades L-I characteristics at high bias current causing the high distortion. The third-order-intermodulation distortion (IMD3) of -88 dBc and relative intensity noise (RIN) of -152 dB/Hz have been obtained under a two-tone test at 1.9 GHz. This suggests that this newly developed laser is quite suitable for high-speed-subcarrier multiplexing transmission
Keywords :
III-V semiconductors; distributed feedback lasers; frequency modulation; gallium arsenide; gallium compounds; high-speed optical techniques; indium compounds; laser beams; laser feedback; laser noise; optical fabrication; optical fibre communication; optical modulation; optical transmitters; quantum well lasers; subcarrier multiplexing; vapour phase epitaxial growth; 1.3 mum; 1.9 GHz; InGaAsP; L-I characteristics; MOCVD; bias current; buried heterostructure; device structure; differential gain; facet selective growth buried heterostructure; high-speed analog transmission; high-speed-subcarrier multiplexing transmission; intermodulation distortion; leakage current; modulation frequency; noise characteristics; quantum-well number; relative intensity noise; resonance frequency; strain-compensated layers; strained MQW; strained MQW-DFB lasers; strained multiquantum-well distributed feedback laser; third-order-intermodulation distortion; well width; Distributed feedback devices; Frequency modulation; Intermodulation distortion; Laser feedback; Laser noise; MOCVD; Quantum well devices; Quantum well lasers; Resonance; Resonant frequency;
Journal_Title :
Quantum Electronics, IEEE Journal of
