Title :
High-frequency quantum-well infrared photodetectors measured by microwave-rectification technique
Author :
Liu, H.C. ; Li, Jianmeng ; Buchanan, M. ; Wasilewski, Zbigniew R.
Author_Institution :
Inst. for Microstructural Sci., Nat. Res. Council of Canada, Ottawa, Ont., Canada
fDate :
6/1/1996 12:00:00 AM
Abstract :
We explore the high-frequency capability of quantum-well infrared photodetectors using a microwave-rectification technique. We characterize a variety of devices with barrier thicknesses from 234 to 466 Å and number of wells from 4 to 32. Our packaged detectors have a relatively flat frequency response up to about 30 GHz. These experiments indicate that the intrinsic photoconductive lifetime for these devices in the high-biasing field regime is in the range of 5-6 ps
Keywords :
infrared detectors; microwave measurement; photoconducting devices; photodetectors; rectification; semiconductor quantum wells; 234 to 466 A; 30 GHz; 5 to 6 ps; barrier thicknesses; frequency response; high-biasing field regime; high-frequency capability; high-frequency quantum-well infrared photodetectors; intrinsic photoconductive lifetime; microwave-rectification technique; packaged detectors; quantum-well infrared photodetectors; Frequency; Infrared detectors; Microwave devices; Microwave measurements; Microwave theory and techniques; Nonlinear optics; Optical mixing; Photodetectors; Quantum well devices; Quantum wells;
Journal_Title :
Quantum Electronics, IEEE Journal of
