DocumentCode :
975346
Title :
Low-voltage vertical directional coupler switch with suppressed electroabsorption
Author :
Bandyopadhyay, A. ; Basu, P.K.
Author_Institution :
Inst. of Radio Phys. & Electron., Calcutta Univ., India
Volume :
32
Issue :
6
fYear :
1996
fDate :
6/1/1996 12:00:00 AM
Firstpage :
1048
Lastpage :
1053
Abstract :
We have studied the performance of a vertical directional coupler in which a multiple quantum well and a bulk semiconductor material act as the cores of the two guides in two arms. The power output of the device is expected to be unaffected by the electroabsorption effect in a directional coupler based on quantum confined Stark effect even when operated very close to the excitonic absorption edge. The above principle is utilized in realizing low-voltage switching and almost equal power in bar and cross states in a multiple-quantum-well (MQW) vertical directional coupler. Our calculation for a vertical coupler composed of InGaAsP bulk and InGaAsP-InP MQWs show switching voltages comparable to that of a similar coupler composed of a more complex barrier reservoir and quantum well electron transfer (BRAQWET) structure, with a slightly lower value of power output
Keywords :
III-V semiconductors; electro-optical switches; electroabsorption; gallium arsenide; gallium compounds; indium compounds; optical directional couplers; optical waveguides; quantum confined Stark effect; quantum interference devices; semiconductor quantum wells; InGaAsP; InGaAsP-InP; bar states; barrier reservoir; bulk semiconductor material; cross states; electroabsorption effect; excitonic absorption edge; low-voltage switching; low-voltage vertical directional coupler switch; multiple quantum well; multiple-quantum-well vertical directional coupler; performance; power output; quantum confined Stark effect; quantum well electron transfer structure; suppressed electroabsorption; switching voltages; vertical coupler; vertical directional coupler; Absorption; Arm; Directional couplers; Potential well; Power semiconductor switches; Quantum well devices; Reservoirs; Semiconductor materials; Stark effect; Voltage;
fLanguage :
English
Journal_Title :
Quantum Electronics, IEEE Journal of
Publisher :
ieee
ISSN :
0018-9197
Type :
jour
DOI :
10.1109/3.502383
Filename :
502383
Link To Document :
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