Title :
InGaAsP planar buried heterostructure laser diode (PBH-LD) with very low threshold current
Author :
Mito, I. ; Kitamura, Masayuki ; Kaede, Kazunori ; Odagiri, Y. ; Seki, Morihiro ; Sugimoto, M. ; Kobayashi, Kaoru
Author_Institution :
Nippon Electric Co. Ltd., Opto-Electronics Research Laboratories, Kawasaki, Japan
Abstract :
Using a new LPE growth technique, an InGaAsP/InP planar buried heterostructure laser diode (PBH-LD) has been realised in 1.3 and 1.5 ¿m wavelength regions. As a result of the effective carrier confinement, CW threshold currents as low as 8.5 mA and 13 mA have been obtained in 1.3 and 1.5 ¿m PHB-LDs, respectively, at room temperature.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; liquid phase epitaxial growth; semiconductor growth; semiconductor junction lasers; 1.3 micron wavelength; 1.5 micron wavelength; CW threshold currents; InGaAsP-InP laser diode; LPE growth technique; effective carrier confinement; planar buried heterostructure laser diode; very low threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820002
