DocumentCode
975409
Title
Nitride-Based Near-Ultraviolet Mesh MQW Light-Emitting Diodes
Author
Kuo, C.H. ; Feng, H.C.
Author_Institution
Nat. Central Univ., Jhong-Li
Volume
19
Issue
23
fYear
2007
Firstpage
1901
Lastpage
1903
Abstract
We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency.
Keywords
etching; light emitting diodes; semiconductor quantum wells; injection current; light extraction efficiency; light-emitting diodes; multiquantum-well light-emitting diodes; nitride-based near-ultraviolet mesh MQW; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Optical sensors; Optical surface waves; Power generation; Quantum well devices; Solid state lighting; Surface texture; Indium–tin–oxide (ITO); light-emitting diode (LED); meshed light-emitting diode (LED); output power;
fLanguage
English
Journal_Title
Photonics Technology Letters, IEEE
Publisher
ieee
ISSN
1041-1135
Type
jour
DOI
10.1109/LPT.2007.907579
Filename
4383195
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