Abstract :
We have demonstrated nitride-based near-ultraviolet mesh multiquantum-well (MQW) light-emitting diodes (LEDs) by etching through the MQW active region. With 20-mA injection current, it was found that forward voltages were 3.29, 3.31, and 3.38 V while output powers were 7.5, 9.0, and 11.3 mW for the planar indium-tin-oxide (ITO) LED, mesh ITO LED, and mesh MQW LED, respectively. The larger LED output power is attributed to the increased light extraction efficiency.
Keywords :
etching; light emitting diodes; semiconductor quantum wells; injection current; light extraction efficiency; light-emitting diodes; multiquantum-well light-emitting diodes; nitride-based near-ultraviolet mesh MQW; Etching; Gallium nitride; Indium tin oxide; Light emitting diodes; Optical sensors; Optical surface waves; Power generation; Quantum well devices; Solid state lighting; Surface texture; Indium–tin–oxide (ITO); light-emitting diode (LED); meshed light-emitting diode (LED); output power;
