DocumentCode
975410
Title
1.40 eV emission band in GaAs
Author
Xin, S.H. ; Wood, C.E.C. ; DeSimone, D. ; Palmateer, S. ; Eastman, L.F.
Author_Institution
Cornell University, School of Electrical Engineering and National Research & Resource Facility for Submicron Structures, Ithaca, USA
Volume
18
Issue
1
fYear
1982
Firstpage
3
Lastpage
5
Abstract
Photoluminescence techniques have been used to detect and characterise the ~ 1.40 eV emission band in an Mn-doped GaAs MBE epilayer and heated semi-insulating Cr-doped GaAs. An activation energy ~ 110 ± 5 meV is obtained from the temperature quenching of the emission intensity, and evidence indicated that physical movement of the Mn atom is responsible for type conversion.
Keywords
III-V semiconductors; gallium arsenide; luminescence of inorganic solids; photoluminescence; radiation quenching; semiconductor epitaxial layers; 1.40 eV emission band; GaAs; Mn-doped GaAs MBE epilayer; activation energy; heated semi-insulating Cr-doped GaAs; photoluminescence; semiconductor; temperature quenching;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820003
Filename
4246177
Link To Document