DocumentCode
975439
Title
Nonradiative regions in GaInAsP/InP double heterostructure laser material: correlation with dislocation clusters in the substrates
Author
Elliott, C.R. ; Regnault, J.C. ; Wakefield, B.
Author_Institution
British Telecom Research Laboratories, Ipswich, UK
Volume
18
Issue
1
fYear
1982
Firstpage
7
Lastpage
8
Abstract
The results of an examination of GaInAsP/InP laser material grown by liquid phase epitaxy using transmission cathodoluminescence, polarised infra-red microscopy and electrochemical etching techniques are reported. It is shown that dislocation clusters in the InP substrate give rise to non-radiative regions in the active layer.
Keywords
III-V semiconductors; dislocations; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; GaInAsP-InP laser; InP substrate; active layer; dislocation clusters; double heterostructure laser; electrochemical etching; liquid phase epitaxy; nonradiative regions; polarised infrared microscopy; semiconductor laser; transmission cathodoluminescence;
fLanguage
English
Journal_Title
Electronics Letters
Publisher
iet
ISSN
0013-5194
Type
jour
DOI
10.1049/el:19820006
Filename
4246180
Link To Document