DocumentCode
975459
Title
New preparation process for sputtered γ-Fe2 O3 thin film disks
Author
Ishii, Y. ; Terada, A. ; Ishii, O. ; Ohta, S. ; Hattori, S. ; Makino, K.
Author_Institution
N.T.T., Tokyo, Japan
Volume
16
Issue
5
fYear
1980
fDate
9/1/1980 12:00:00 AM
Firstpage
1114
Lastpage
1116
Abstract
A new preparation process for sputtered γ-Fe2 O3 thin film disks has been developed. The new process is composed of Fe3 O4 film formation by reactive sputtering and oxidation to γ-Fe2 O3 film. The characteristic of the process is that the Fe3 O4 single phase film is formed directly by reactive sputtering of an Fe-alloy target in Ar-O2 atmosphere. The magnetic properties and recording results of the newly developed γ-Fe2 O3 thin films were almost equal to those of the reported sputtered films. Recording density D50 reached 1,100 bits/mm.
Keywords
Magnetic disk recording; Sputtering; Coercive force; Disk recording; Electrodes; Electrons; Laboratories; Magnetic films; Magnetic properties; Magnetic recording; Oxidation; Sputtering;
fLanguage
English
Journal_Title
Magnetics, IEEE Transactions on
Publisher
ieee
ISSN
0018-9464
Type
jour
DOI
10.1109/TMAG.1980.1060660
Filename
1060660
Link To Document