Title :
Current gain enhancement effect by gate doping in bipolar-mode field-effect transistor
Author :
Bellone, Salvatore ; Cocorullo, Giuseppe ; Fallica, Giorgio ; Musumeci, Salvatore
Author_Institution :
Dept. of Electron. Eng., Naples Univ., Italy
fDate :
1/1/1990 12:00:00 AM
Abstract :
The effect of the gate doping level on the current gain H FS of a bipolar-mode field-effect transistor (BMFET) in the range of high drain current densities is investigated. It is demonstrated that the gate doping level can be chosen to optimize the current gain without significantly compromising the other features of the device. The behavior of HFS is fully justified in terms of the doping dependency of the various minority-carrier transport parameters of the gate
Keywords :
field effect transistors; minority carriers; semiconductor doping; bipolar-mode field-effect transistor; current gain; doping dependency; gate doping; high drain current densities; minority-carrier transport parameters; Doping; FETs; Heat transfer; Infrared sensors; Large scale integration; Logic arrays; Packaging; Schottky diodes; Semiconductor diodes; Temperature sensors;
Journal_Title :
Electron Devices, IEEE Transactions on
