• DocumentCode
    975461
  • Title

    Current gain enhancement effect by gate doping in bipolar-mode field-effect transistor

  • Author

    Bellone, Salvatore ; Cocorullo, Giuseppe ; Fallica, Giorgio ; Musumeci, Salvatore

  • Author_Institution
    Dept. of Electron. Eng., Naples Univ., Italy
  • Volume
    37
  • Issue
    1
  • fYear
    1990
  • fDate
    1/1/1990 12:00:00 AM
  • Firstpage
    303
  • Lastpage
    305
  • Abstract
    The effect of the gate doping level on the current gain H FS of a bipolar-mode field-effect transistor (BMFET) in the range of high drain current densities is investigated. It is demonstrated that the gate doping level can be chosen to optimize the current gain without significantly compromising the other features of the device. The behavior of HFS is fully justified in terms of the doping dependency of the various minority-carrier transport parameters of the gate
  • Keywords
    field effect transistors; minority carriers; semiconductor doping; bipolar-mode field-effect transistor; current gain; doping dependency; gate doping; high drain current densities; minority-carrier transport parameters; Doping; FETs; Heat transfer; Infrared sensors; Large scale integration; Logic arrays; Packaging; Schottky diodes; Semiconductor diodes; Temperature sensors;
  • fLanguage
    English
  • Journal_Title
    Electron Devices, IEEE Transactions on
  • Publisher
    ieee
  • ISSN
    0018-9383
  • Type

    jour

  • DOI
    10.1109/16.43832
  • Filename
    43832
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975461