DocumentCode :
975474
Title :
New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Author :
Capasso, F.
Author_Institution :
Bell Laboratories, Murray Hill, USA
Volume :
18
Issue :
1
fYear :
1982
Firstpage :
12
Lastpage :
13
Abstract :
A new low-excess-noise avalanche detector is proposed. In this structure electrons and holes are spatially separated and impact ionise in regions of different bandgap. The ionisation rates ratio can thus be made extremely high (¿/ß¿100) by suitably choosing the bandgap difference, so that the device mimics a photomultiplier. This new concept is applicable to most III-V lattice-matched heterojunctions, including long-wavelength materials.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; AlGaAs-GaAs; III-V lattice-matched heterojunctions; avalanche detector; bandgap; electron avalanche region; hole avalanche regions; impact ionisation; ionisation rates ratio; long-wavelength materials; semiconductors; ultra-low-noise avalanche photodiode;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820009
Filename :
4246183
Link To Document :
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