Title :
New ultra-low-noise avalanche photodiode with separated electron and hole avalanche regions
Author_Institution :
Bell Laboratories, Murray Hill, USA
Abstract :
A new low-excess-noise avalanche detector is proposed. In this structure electrons and holes are spatially separated and impact ionise in regions of different bandgap. The ionisation rates ratio can thus be made extremely high (¿/ß¿100) by suitably choosing the bandgap difference, so that the device mimics a photomultiplier. This new concept is applicable to most III-V lattice-matched heterojunctions, including long-wavelength materials.
Keywords :
III-V semiconductors; aluminium compounds; avalanche photodiodes; gallium arsenide; impact ionisation; photodetectors; AlGaAs-GaAs; III-V lattice-matched heterojunctions; avalanche detector; bandgap; electron avalanche region; hole avalanche regions; impact ionisation; ionisation rates ratio; long-wavelength materials; semiconductors; ultra-low-noise avalanche photodiode;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820009
