Title :
InGaAsP/InP dual wavelength lasers
Author :
Sakai, Shin´ichi ; Aoki, Toyohiro ; Umeno, Masayoshi
Author_Institution :
Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
Abstract :
The first successful dual wavelength lasers emitting at 1.2 ¿m and 1.3 ¿m wavelengths are described. The lasers operated up to 0°C.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.2 microns wavelength; 1.3 microns wavelength; InGaAsP-InP laser; dual wavelength lasers; semiconductor laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820013
