• DocumentCode
    975523
  • Title

    InGaAsP/InP dual wavelength lasers

  • Author

    Sakai, Shin´ichi ; Aoki, Toyohiro ; Umeno, Masayoshi

  • Author_Institution
    Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    17
  • Lastpage
    18
  • Abstract
    The first successful dual wavelength lasers emitting at 1.2 ¿m and 1.3 ¿m wavelengths are described. The lasers operated up to 0°C.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.2 microns wavelength; 1.3 microns wavelength; InGaAsP-InP laser; dual wavelength lasers; semiconductor laser;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820013
  • Filename
    4246187
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975523