Title :
Dual wavelength InGaAsP/Inp TJS lasers
Author :
Sakai, Shin´ichi ; Aoki, Toyohiro ; Umeno, Masayoshi
Author_Institution :
Nagoya Institute of Technology, Department of Engineering Science, Nagoya, Japan
Abstract :
InGaAsP/InP dual wavelength TJS lasers emitting at 1.17 ¿m and 1.3 ¿m wavelengths at room temperature are described. The threshold currents for both diodes are the same. The fabrication procedure and characteristics of the lasers are presented.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor junction lasers; 1.17 microns wavelength; 1.3 microns wavelength; InGaAsP-InP laser; characteristics; dual wavelength TJS lasers; fabrication procedure; room temperature; semiconductor laser; threshold currents; transverse junction stripe laser;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820014
