Title :
Silicon implanted super low-noise GaAs MESFET
Author :
Feng, Ming ; Eu, V.K. ; Siracusa, M. ; Watkins, E. ; Kimura, Hiromitsu ; Winston, H.
Author_Institution :
Hughes Aircraft Company, Torrance Research Center, Torrance, USA
Abstract :
Super low-nose GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1.3 dB, with an associated gain of 10.3 dB and a maximum available gain of 14.9 dB.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; ion implantation; solid-state microwave devices; 12 GHz; Si implantation; associated gain; ion implantation; maximum available gain; microwave properties; noise figure; super low-noise GaAs MESFET; undoped LEC substrates;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820016
