• DocumentCode
    975553
  • Title

    Silicon implanted super low-noise GaAs MESFET

  • Author

    Feng, Ming ; Eu, V.K. ; Siracusa, M. ; Watkins, E. ; Kimura, Hiromitsu ; Winston, H.

  • Author_Institution
    Hughes Aircraft Company, Torrance Research Center, Torrance, USA
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    21
  • Lastpage
    23
  • Abstract
    Super low-nose GaAs MESFETs have been fabricated using direct ion implantation into undoped LEC substrates. Microwave results at 12 GHz include a noise figure of 1.3 dB, with an associated gain of 10.3 dB and a maximum available gain of 14.9 dB.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; electron device noise; gallium arsenide; ion implantation; solid-state microwave devices; 12 GHz; Si implantation; associated gain; ion implantation; maximum available gain; microwave properties; noise figure; super low-noise GaAs MESFET; undoped LEC substrates;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820016
  • Filename
    4246190
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975553