Title :
1.3¿m InGaAsP/InP light emitting diodes with internally defined emission area prepared by single-step LPE technique
Author_Institution :
Siemens AG, Research Laboratories, Mÿnchen, West Germany
Abstract :
An LPE single-step process is described for the fabrication of InGaAsP/InP double heterostructure surface emitting LEDs with internally defined emission area. The technique provides a simple production method which lends itself to simple upside-up mounting of LED chips and application of back surface mirrors for enhancement of light extraction efficiency.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; light emitting diodes; liquid phase epitaxial growth; semiconductor growth; 1.3 micro wavelength; InGaAsP-InP light emitting diode; LED; back surface mirrors; double heterostructure surface emitting LEDs; internally defined emission area; light extraction efficiency; single-step LPE technique; upside-up mounting;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820017
