Title :
CW operation of DFB-BH GaInAsP/InP lasers in 1.5 ¿m wavelength region
Author :
Matsuoka, T. ; Nagai, H. ; Itaya, Y. ; Noguchi, Y. ; Suzuki, Y. ; Ikegami, T.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Distributed-feedback buried heterostructure (DFB-BH) GaInAsP/InP lasers in the 1.5 ¿m wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.5 microns wavelength region; 310K; CW operation; GaInAsP-InP laser; distributed feedback buried heterostructure laser; heat-sink temperatures; semiconductor laser; single longitudinal mode operation; threshold current;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820020
