• DocumentCode
    975591
  • Title

    CW operation of DFB-BH GaInAsP/InP lasers in 1.5 ¿m wavelength region

  • Author

    Matsuoka, T. ; Nagai, H. ; Itaya, Y. ; Noguchi, Y. ; Suzuki, Y. ; Ikegami, T.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    27
  • Lastpage
    28
  • Abstract
    Distributed-feedback buried heterostructure (DFB-BH) GaInAsP/InP lasers in the 1.5 ¿m wavelength region have been operated continuously at heat-sink temperatures as high as 310 K. A threshold current of 55 mA at 300 K and single longitudinal mode operation have been obtained.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; laser modes; semiconductor junction lasers; 1.5 microns wavelength region; 310K; CW operation; GaInAsP-InP laser; distributed feedback buried heterostructure laser; heat-sink temperatures; semiconductor laser; single longitudinal mode operation; threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820020
  • Filename
    4246194
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975591