• DocumentCode
    975641
  • Title

    Double polysilicon plate capacitors with oxide/nitride insulator

  • Author

    Gildenblat, Gennady ; Ghezzo, M. ; Norton, Jim

  • Author_Institution
    General Electric Company, Corporate Research & Development, Schenectady, USA
  • Volume
    18
  • Issue
    1
  • fYear
    1982
  • Firstpage
    34
  • Lastpage
    36
  • Abstract
    The letter describes the fabrication procedure and the electrical properties of a double polysilicon plate capacitor with composite SiO2/Si3N4 insulators. The presence of the Si3N4 layer allows elimination completely of low-voltage breakdown events and reduces the leakage current to the 10¿9 A/cm2 level. Different layout configurations are compared based on the evaluation of experimental data.
  • Keywords
    capacitors; field effect integrated circuits; integrated circuit technology; Si gate process; composite SiO2/Si3N4 insulators; double polysilicon plate capacitor; electrical properties; fabrication procedure; layout configurations; leakage current; oxide/nitride insulator; poly Si;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820025
  • Filename
    4246199
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975641