Title :
Double polysilicon plate capacitors with oxide/nitride insulator
Author :
Gildenblat, Gennady ; Ghezzo, M. ; Norton, Jim
Author_Institution :
General Electric Company, Corporate Research & Development, Schenectady, USA
Abstract :
The letter describes the fabrication procedure and the electrical properties of a double polysilicon plate capacitor with composite SiO2/Si3N4 insulators. The presence of the Si3N4 layer allows elimination completely of low-voltage breakdown events and reduces the leakage current to the 10¿9 A/cm2 level. Different layout configurations are compared based on the evaluation of experimental data.
Keywords :
capacitors; field effect integrated circuits; integrated circuit technology; Si gate process; composite SiO2/Si3N4 insulators; double polysilicon plate capacitor; electrical properties; fabrication procedure; layout configurations; leakage current; oxide/nitride insulator; poly Si;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820025
