Steady state characterization of an optically controlled p-i-n diode for low frequency switching under front/back illumination

Author

Schwartzenberg, John W. ; Nwankpa, Chika O. ; Fischl, Robert ; Rosen, Arye ; Gilbert, Dean B. ; Richardson, David

Author_Institution

Drexel Univ., Philadelphia, PA, USA

Volume

43

Issue

7

fYear

1996

fDate

7/1/1996 12:00:00 AM

Firstpage

1061

Lastpage

1065

Abstract

This paper describes the determination of the steady state operating characteristics of an optically controlled Si p-i-n illuminated from either top or bottom for varying electrode spacings and conducting layer thicknesses. Optically controlled p-i-n diodes have previously been used in both microwave and pulsed power applications and are now being considered for use in high-power, low-frequency (60 Hz) switching such as Static Var Compensators

Keywords

p-i-n photodiodes; power semiconductor diodes; power semiconductor switches; semiconductor plasma; static VAr compensators; 60 Hz; Si; conducting layer thicknesses; electrode spacings; front/back illumination; high-power switching; low frequency switching; optically controlled p-i-n diode; static VAr compensators; steady state operating characteristics; Electrodes; Frequency; High speed optical techniques; Ion implantation; Lighting; Optical control; Optical pulses; P-i-n diodes; Plasma measurements; Steady-state;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.502415

Filename

502415