• DocumentCode
    975763
  • Title

    Threshold voltage of ion implanted GaAs MESFET

  • Author

    Mizutani, Tomoko ; Ishida, Shigesuke ; Honda, Taiki ; Kawasaki, Yoji

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    53
  • Lastpage
    54
  • Abstract
    Threshold voltages for ion implanted GaAs MESFETs are measured and shown to have good coincidence with calculated results. The effect of implantation energy on threshold voltage is discussed. The optimum implantation energy is about 45 ~ 60 keV.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; IC fabrication; implantation energy; ion implanted GaAs MESFET; threshold voltage;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820037
  • Filename
    4246212
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975763