Title :
Threshold voltage of ion implanted GaAs MESFET
Author :
Mizutani, Tomoko ; Ishida, Shigesuke ; Honda, Taiki ; Kawasaki, Yoji
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Threshold voltages for ion implanted GaAs MESFETs are measured and shown to have good coincidence with calculated results. The effect of implantation energy on threshold voltage is discussed. The optimum implantation energy is about 45 ~ 60 keV.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; field effect integrated circuits; gallium arsenide; integrated circuit technology; ion implantation; IC fabrication; implantation energy; ion implanted GaAs MESFET; threshold voltage;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820037
