Title :
Ion beam annealed As+ implanted silicon
Author :
Hemment, P.L.F. ; Maydell-Ondrusz, E. ; Scovell, P.D.
Author_Institution :
University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
Abstract :
As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1¿/¿ and no measurable change in the arsenic distribution.
Keywords :
elemental semiconductors; ion beam effects; ion implantation; recrystallisation annealing; silicon; 6*1015 As+ per cm2; Ar distribution; Ar+ ion beams; As+ ion beams; IC technology; annealing; direct heating; dopant ions; good crystallinity; implanted Si; low sheet resistivity;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820040
