• DocumentCode
    975800
  • Title

    Ion beam annealed As+ implanted silicon

  • Author

    Hemment, P.L.F. ; Maydell-Ondrusz, E. ; Scovell, P.D.

  • Author_Institution
    University of Surrey, Department of Electronic & Electrical Engineering, Guildford, UK
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    57
  • Lastpage
    59
  • Abstract
    As+ and Ar+ ion beams have been used to anneal silicon implanted with 6 × 1015 As+/cm2 at 170 keV. Samples were annealed by (i) Ar+ incident on the back face or (ii) direct heating by the dopant ions. Those annealed by (i) exhibited good crystallinity, a low sheet resistivity of 24.0 ± 0 1¿/¿ and no measurable change in the arsenic distribution.
  • Keywords
    elemental semiconductors; ion beam effects; ion implantation; recrystallisation annealing; silicon; 6*1015 As+ per cm2; Ar distribution; Ar+ ion beams; As+ ion beams; IC technology; annealing; direct heating; dopant ions; good crystallinity; implanted Si; low sheet resistivity;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820040
  • Filename
    4246215
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975800