DocumentCode :
975807
Title :
Current-voltage characteristics of Schottky barrier diodes with dynamic interfacial defect state occupancy
Author :
Darling, Robert B.
Author_Institution :
Dept. of Electr. Eng., Washington Univ., Seattle, WA, USA
Volume :
43
Issue :
7
fYear :
1996
fDate :
7/1/1996 12:00:00 AM
Firstpage :
1153
Lastpage :
1160
Abstract :
Schottky barrier diode theory conventionally assumes that the barrier height remains constant with the applied bias. However, high ideality factors and certain anomalous capacitance-voltage characteristics can only be explained by letting the barrier height vary with the applied voltage. Changes in the occupation of surface states have been inferred to be the cause of this change in barrier height, although the precise nature of these surface states has not yet been determined. This article examines the role of monoenergetic interfacial defect states whose occupancy is dynamically controlled by the local carrier densities, rather than by equilibrium conditions. Certain types of surface donor and acceptor states are shown to have a strong influence on the resulting current-voltage characteristics. The Al/GaAs(100) system is discussed in detail and experimental results are compared to this analytic model
Keywords :
Schottky diodes; defect states; interface states; semiconductor device models; Al-GaAs; Al/GaAs(100) system; Schottky barrier diode; acceptor states; analytic model; barrier height; capacitance-voltage characteristics; carrier density; current-voltage characteristics; donor states; dynamic interfacial defect states; ideality factor; surface states; Capacitance-voltage characteristics; Current-voltage characteristics; Photonic band gap; Schottky barriers; Schottky diodes; Semiconductor diodes; Semiconductor-metal interfaces; Senior members; Surface contamination; Voltage;
fLanguage :
English
Journal_Title :
Electron Devices, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9383
Type :
jour
DOI :
10.1109/16.502427
Filename :
502427
Link To Document :
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