Title :
Optically pumped laser action at 77 K of InGaP/InGaAlP double heterostructures grown by MBE
Author :
Asahi, H. ; Kawamura, Yuriko ; Nagai, Hiroto ; Ikegami, Tomoaki
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
Optically pumped laser action at a wavelength of 0.63 ¿m has been achieved at 77 K in InGaP/InGaAlP double heterostructures grown on (100) GaAs substrates by molecular beam epitaxy. The threshold pump power density was about 2.5 × 103 W/cm2
Keywords :
III-V semiconductors; aluminium compounds; gallium compounds; indium compounds; molecular beam epitaxial growth; optical pumping; semiconductor junction lasers; 0.63 microns wavelength; 77K; GaAs substrates; III-V semiconductors; IR laser action; InGaP-InGaAlP double heterostructure; MBE; low temperature; molecular beam epitaxy; optically pumped laser action; semiconductor junction lasers; threshold pump power density;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820043
