Analytical threshold voltage model for short channel double-gate SOI MOSFETs

Solving a two-dimensional (2-D) Poisson equation and assuming the minimum potential determines the threshold voltage, V_th, we derived a model for V_th of short channel double-gate SOI MOSFETs, and verified its validity by comparing with numerical data. We evaluated the threshold voltage lowering, ΔV_th, and subthreshold swing (S-swing) degradation with decreasing gate length L _G, and showed that we can design a 0.05-μm-L_G device with ΔV_th of less than 50 mV and an S-swing of less than 70 mV/decade if 10-nm-thick SOI is available