• DocumentCode
    975839
  • Title

    Anodic oxide film as gate insulator for InP MOSFETs

  • Author

    Yamamoto, Akiyasu ; Uemura, C.

  • Author_Institution
    NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    63
  • Lastpage
    64
  • Abstract
    An anodic oxide film of InP, which had an interface state density of ¿ 1011 cm¿2 eV¿1 near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm2/Vs) in the accumulation-mode InP MOSFETs.
  • Keywords
    III-V semiconductors; anodised layers; carrier mobility; indium compounds; insulated gate field effect transistors; oxidation; III-V semiconductors; InP MOSFET; accumulation-mode; anodic oxide film; field effect devices; gate insulator; high electron effective mobility;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820044
  • Filename
    4246219
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975839