Title :
Anodic oxide film as gate insulator for InP MOSFETs
Author :
Yamamoto, Akiyasu ; Uemura, C.
Author_Institution :
NTT Ibaraki Electrical Communication Laboratory, Tokai, Japan
Abstract :
An anodic oxide film of InP, which had an interface state density of ¿ 1011 cm¿2 eV¿1 near midgap and worked well as the gate insulator for InP MOSFETs, was obtained by optimising its preparation conditions. The excellence of the anodic oxide as a gate insulator was confirmed by a high electron effective mobility (1500 cm2/Vs) in the accumulation-mode InP MOSFETs.
Keywords :
III-V semiconductors; anodised layers; carrier mobility; indium compounds; insulated gate field effect transistors; oxidation; III-V semiconductors; InP MOSFET; accumulation-mode; anodic oxide film; field effect devices; gate insulator; high electron effective mobility;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820044
