Title :
Hole traps in n-type Ga1-xAlxAs grown by organometallic vapour phase epitaxy
Author :
Wu, R.H. ; Allsopp, Duncan ; Peaker, A.R.
Author_Institution :
University of Manchester Institute of Science & Technology, Manchester, UK
Abstract :
Minority carrier traps in n-type Ga1-xAlxAs (x = 0.25 and 0.30) grown by the organometallic vapour phase epitaxy process have been investigated by minority carrier transient spectroscopy (MCTS). Hole traps with thermal activation energies of Ev + 0.35 and 0.48 eV and a deeper centre have been observed in GaAs and at Ev + 0.20, 0.26, 0.44 and 0.78 in GaAlAs. The electron and hole capture cross-sections of these centres have also been measured.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; hole traps; minority carriers; semiconductor epitaxial layers; vapour phase epitaxial growth; GaAlAs; GaAs; III-V semiconductors; electron capture cross-sections; hole capture cross-sections; hole traps; minority carrier transient spectroscopy; minority carrier traps; n-type Ga1-xAlxAs; organometallic vapour phase epitaxy; thermal activation energies;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820052
