• DocumentCode
    975934
  • Title

    Low-threshold-current distributed-feedback InGaAsP/InP CW lasers

  • Author

    Akiba, Shigeyuki ; Utaka, K. ; Sakai, Kenji ; Matsushima, Y.

  • Author_Institution
    KDD Research & Development Laboratories, Tokyo, Japan
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    77
  • Lastpage
    78
  • Abstract
    Distributed-feedback buried-heterostructure InGaAsP/InP lasers with room temperature CW threshold current as low as 50 mA, corresponding to a current density of 2.3 kA/cm2, are presented. CW operation in the temperature range from ¿20°C to 58°C was confirmed.
  • Keywords
    III-V semiconductors; distributed feedback lasers; gallium arsenide; indium compounds; semiconductor junction lasers; -20 to 58 degrees C; CW lasers; III-V semiconductors; buried-heterostructure InGaAsP-InP lasers; distributed-feedback; low threshold current;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820053
  • Filename
    4246228
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=975934