Title :
High performance GaAs MESFETs grown on InP substrates by MOCVD using tertiarybutylarsine
Author :
Jeong, Joonsoo ; Lum, R.M. ; Klingert, J.K. ; Bylsma, R. ; Vella-Coleiro, G.P. ; Smith, Peter
Author_Institution :
AT&T Bell Labs., Murray Hill, NJ, USA
fDate :
3/29/1990 12:00:00 AM
Abstract :
Device performance of GaAs metal-semiconductor field effect transistors (MESFETs) grown by metalorganic chemical vapour deposition (MOCVD) on InP substrates using tertiarybutylarsine (t-BuAsH2) is reported. The 1 mu m gate FETs have a maximum extrinsic transconductance of 135 mS/mm and an output transconductance of 5.5 mS/mm. A frequency of unity current gain of 11 GHz and a maximum frequency of oscillation of 22 GHz are obtained from S-parameter measurements. DC and microwave characteristics of t-BuAsH2 grown GaAs MESFETs are comparable to those of GaAs MESFETs grown using AsH3.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; semiconductor growth; solid-state microwave devices; vapour phase epitaxial growth; 1 micron; 11 GHz; 135 mS; 22 GHz; 5.5 mS; DC characteristics; GaAs-InP; III-V semiconductors; InP substrates; MESFETs; MOCVD; S-parameter measurements; SHF; field effect transistors; maximum extrinsic transconductance; metalorganic chemical vapour deposition; microwave characteristics; microwave transistors; output transconductance; tertiarybutylarsine;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19900313
