DocumentCode :
975987
Title :
Tunnelling through GaAs-AlxGa1¿xAs-GaAs double heterojunctions
Author :
Delagebeaudeuf, D. ; Delescluse, P. ; Etienne, P. ; Massies, J. ; Laviron, M. ; Chaplart, J. ; Linh, T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Volume :
18
Issue :
2
fYear :
1982
Firstpage :
85
Lastpage :
87
Abstract :
GaAs-Al0.5Ga0.5As-GaAs tunnel diodes have been achieved. Tunnel currents have been measured and compared to theoretical calculations based on WKB approximation.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; tunnel diodes; tunnelling; GaAs-Al0.5Ga0.5As-GaAs tunnel diodes; GaAs-AlxGa1-xAs-GaAs double heterojunctions; III-V semiconductors; Wentzel-Kramer-Brillouin approximation;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820059
Filename :
4246234
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=975987
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