Design and operation of 8-micron period bubble devices

The bubble device functions of generation, propagation, switching and detection, with a storage cell size of 7.0 × 8.4 μm², are reported. The devices were fabricated using a non-planar process with plated permalloy. The chip organization is of major/minor loop construction with simple transfer in and out switches and minimum design feature of 1 μm. Overall margins of about 25 Oe have been obtained using a sine wave drive field in the 50-60 oersted range at 250 KHz.