Title :
N-channel MISFETs on semi-insulating InP for logic applications
Author :
Henry, Leanne ; Lecrosnier, D. ; L´Haridon, H. ; Paugham, J. ; Pelous, G. ; Richou, F. ; Salvi, M.
Author_Institution :
CNET, LAB/ICM/TOH, Lannion, France
Abstract :
N-channel enhancement and depletion mode MISFETs have been fabricated on the same Fe-doped semi-insulating wafer. Their electrical characteristics are reported, along with some comparison with MISFETs processed on a silicon substrate with the same mark set.
Keywords :
III-V semiconductors; field effect integrated circuits; indium compounds; insulated gate field effect transistors; integrated logic circuits; Fe-doped semi-insulating wafer; III-V semiconductors; N-channel MISFETs; depletion mode MISFETs; electrical characteristics; logic; semi-insulating InP;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820069
