• DocumentCode
    976100
  • Title

    N-channel MISFETs on semi-insulating InP for logic applications

  • Author

    Henry, Leanne ; Lecrosnier, D. ; L´Haridon, H. ; Paugham, J. ; Pelous, G. ; Richou, F. ; Salvi, M.

  • Author_Institution
    CNET, LAB/ICM/TOH, Lannion, France
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    102
  • Lastpage
    103
  • Abstract
    N-channel enhancement and depletion mode MISFETs have been fabricated on the same Fe-doped semi-insulating wafer. Their electrical characteristics are reported, along with some comparison with MISFETs processed on a silicon substrate with the same mark set.
  • Keywords
    III-V semiconductors; field effect integrated circuits; indium compounds; insulated gate field effect transistors; integrated logic circuits; Fe-doped semi-insulating wafer; III-V semiconductors; N-channel MISFETs; depletion mode MISFETs; electrical characteristics; logic; semi-insulating InP;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820069
  • Filename
    4246244
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976100