Title :
Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential
Author :
Delagebeaudeuf, D. ; Laviron, M. ; Delescluse, P. ; Tung, Pham N. ; Chaplart, J. ; Linh, Nuyen T.
Author_Institution :
Thomson-CSF, Central Research Laboratory, Orsay, France
Abstract :
Planar enhancement mode two-dimensional electron gas FETs (TEGFETs) are described. Certain aspects of their high performances are interpreted as being due to the low surface potential (0.33 eV) of the AlGaAs uppermost layer.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron gas; gallium arsenide; surface potential; AlGaAs uppermost layer; III-V semiconductors; TEGFET; low surface potential; planar enhancement mode; two-dimensional electron gas FET;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820070
