• DocumentCode
    976111
  • Title

    Planar enhancement mode two-dimensional electron gas FET associated with a low AlGaAs surface potential

  • Author

    Delagebeaudeuf, D. ; Laviron, M. ; Delescluse, P. ; Tung, Pham N. ; Chaplart, J. ; Linh, Nuyen T.

  • Author_Institution
    Thomson-CSF, Central Research Laboratory, Orsay, France
  • Volume
    18
  • Issue
    2
  • fYear
    1982
  • Firstpage
    103
  • Lastpage
    105
  • Abstract
    Planar enhancement mode two-dimensional electron gas FETs (TEGFETs) are described. Certain aspects of their high performances are interpreted as being due to the low surface potential (0.33 eV) of the AlGaAs uppermost layer.
  • Keywords
    III-V semiconductors; Schottky gate field effect transistors; aluminium compounds; electron gas; gallium arsenide; surface potential; AlGaAs uppermost layer; III-V semiconductors; TEGFET; low surface potential; planar enhancement mode; two-dimensional electron gas FET;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820070
  • Filename
    4246245
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976111