Title :
AlGaAs/GaAs JFETs by organo-metallic and molecular beam epitaxy
Author :
Maloney, T.J. ; Saxena, R.R. ; Chai, Y.G.
Author_Institution :
Varian Associates, Inc., Corporate Solid State Laboratory, Palo Alto, USA
Abstract :
Normally-off and normally-on AlGaAs/GaAs heterojunction gate GaAs FETs (HJFETs) for high-speed logic applications have been fabricated with molecular beam epitaxy (MBE) and organometallic vapour phase epitaxy (OM-VPE). The best normally-off devices used MBE n-GaAs active layers and OM-VPE gate layers of p+-AlGaAs and p+-GaAs. Saturation currents followed a square law and current scaling constants were the highest on record for HJFETs, greater than 50 ¿A/¿m-V2.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; junction gate field effect transistors; molecular beam epitaxial growth; p-n heterojunctions; AlGaAs-GaAs heterojunction gate JFETs; III-V semiconductors; current scaling constants; logic applications; molecular beam epitaxy; normally-off devices; organometallic vapour phase epitaxy; saturation currents;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820075
