Title :
A 50-MHz 8-Mbit video RAM with a column direction drive sense amplifier
Author :
Kotani, Hisakazu ; Akamatsu, Hironori ; Matsushima, Junko ; Okada, Shozo ; Shiragasawa, Tsuyoshi ; Yamada, Toshio ; Inoue, Michihiro
Author_Institution :
Matsushita Electr. Ind. Co. Ltd., Osaka, Japan
fDate :
2/1/1990 12:00:00 AM
Abstract :
An 8-Mb (1-Mwords×8-b) dynamic RAM which utilizes a column direction drive sense amplifier to obtain low peak current is described. The power supply peak current is about one fourth of that for conventional circuits. The chip operates at 50-MHz and is fabricated with a 0.7-μm n-well CMOS, double-level polysilicon, single-polycide, and double-level metal technology. The memory cell is a surrounding hi-capacitance cell structure. The cell size is 1.8×3.0 μm2, and the chip area is 12.7×16.91 mm2
Keywords :
CMOS integrated circuits; VLSI; amplifiers; integrated circuit technology; integrated memory circuits; random-access storage; video equipment; 0.7 micron; 1 Mbyte; 1.8 to 3 micron; 12.7 to 16.91 mm; 50 MHz; 8 Mbit; CMOS; DRAM; HDTV; ULSI; VRAM; cell size; chip area; column direction drive sense amplifier; double-level metal technology; double-level polysilicon; dynamic RAM; low peak current; memory cell; power supply peak current; single-polycide; surrounding capacitor cell; surrounding hi-capacitance cell structure; video RAM; Circuit noise; Counting circuits; Current supplies; DRAM chips; HDTV; Noise generators; Power supplies; Random access memory; Read-write memory; TV;
Journal_Title :
Solid-State Circuits, IEEE Journal of
