Title :
Monte Carlo particle simulation of GaAs submicron n+-i-n+ diode
Author :
Awano, Yuji ; Tomizawa, Keiichi ; Hashizume, Nobuya ; Kawashima, Mitsumasa
Author_Institution :
Electrotechnical Laboratory, Tsukuba, Japan
Abstract :
Monte Carlo particle simulation of a GaAs submicron n+-i-n+ diode showed that the electron transport in the diode is almost ballistic in nature, so long as the electron energy is below 0.36 eV. A maximum electron velocity of 1 × 108 cm s¿1 was observed at certain conditions. Effects of the electron backscattering from the anode n+-layer are also discussed.
Keywords :
III-V semiconductors; Monte Carlo methods; gallium arsenide; semiconductor diodes; GaAs submicron n+-i-n+ diode; III-V semiconductor; Monte Carlo particle simulation; ballistic; electron backscattering; electron energy; electron transport;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820089
