DocumentCode :
976439
Title :
White light generation with CdSe-ZnS nanocrystals coated on an InGaN-GaN quantum-well blue/Green two-wavelength light-emitting diode
Author :
Chen, Horng-Shyang ; Yeh, Dong-Ming ; Lu, Chih-Feng ; Chi-Feng Huang ; Shiao, Wen-Yu ; Huang, Chi-Feng ; Yang, C.C. ; Liu, I. Shuo ; Su, Wei-Fang
Author_Institution :
Dept. of Electr. Eng., Nat. Taiwan Univ., Taipei
Volume :
18
Issue :
13
fYear :
2006
fDate :
7/1/2006 12:00:00 AM
Firstpage :
1430
Lastpage :
1432
Abstract :
We grew and processed a blue/green two-wavelength light-emitting diode (LED) based on the mixture of two kinds of quantum wells (QW) in epitaxial growth. The X-ray diffraction and photoluminescence measurements indicated that the crystalline structure and the basic optical property of individual kinds of QW are not significantly changed in the mixed growth. The relative electroluminescence (EL) intensity of the two colors depends on the injection current level, which controls the hole concentration distribution among the QWs. At low injection levels, the top green-emitting QW dominates in EL. As the injection current increases, the blue-emitting QWs beneath become dominating. We also coated CdSe-ZnS nanocrystals on the top of the two-wavelength LED for converting blue photons into red light. With the coating of such nanocrystals, the device emits blue, green, and red lights for white light generation
Keywords :
II-VI semiconductors; III-V semiconductors; X-ray diffraction; cadmium compounds; electroluminescence; gallium compounds; indium compounds; light emitting diodes; nanostructured materials; photoluminescence; quantum well devices; semiconductor epitaxial layers; zinc compounds; CdSe-ZnS; CdSe-ZnS nanocrystals; InGaN-GaN; InGaN-GaN light-emitting diode; X-ray diffraction; blue light-emitting diode; crystalline structure; electroluminescence; epitaxial growth; green light-emitting diode; hole concentration distribution; injection current level; photoluminescence; quantum-well light-emitting diode; two-wavelength light-emitting diode; white light generation; Coatings; Crystallization; Electroluminescence; Epitaxial growth; Light emitting diodes; Nanocrystals; Optical diffraction; Photoluminescence; Quantum wells; X-ray diffraction; Light-emitting diode (LED); nanocrystal; white light generation;
fLanguage :
English
Journal_Title :
Photonics Technology Letters, IEEE
Publisher :
ieee
ISSN :
1041-1135
Type :
jour
DOI :
10.1109/LPT.2006.877551
Filename :
1643246
Link To Document :
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