Title :
Microwave phase retardation in saturated InGaAs photodetectors
Author :
Currie, Marc ; Vurgaftman, Igor
Author_Institution :
Opt. Sci. Div., Naval Res. Lab., Washington, DC
fDate :
7/1/2006 12:00:00 AM
Abstract :
Under high optical fluence, the time-domain saturation of photodetectors is observed by a broadened peak as well as an increase in fall time. As the intensity of an optical pulse train of 2-ps pulses at 1 GHz is increased, an InGaAs p-i-n photodetector moves from an unsaturated to a saturated regime. The resulting electrical pulse´s centroid moves later in time as the optical fluence is increased. This pulse centroid motion during photodetector saturation fits a linear shift in the detected phase of the microwave oscillator impressed upon the optical carrier producing an amplitude-to-phase converter
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; microwave oscillators; microwave photonics; p-i-n photodiodes; photodetectors; 1 GHz; 2 ps; InGaAs; InGaAs photodetectors; amplitude-to-phase converter; electrical pulse centroid; microwave oscillator; microwave retardation; optical carrier; optical fluence; optical pulse train; p-i-n photodetector; phase retardation; saturated photodetectors; time-domain saturation; unsaturated regime; Dynamic range; Indium gallium arsenide; Nonlinear optics; Optical pulses; Optical saturation; Optical waveguides; Photodetectors; Photodiodes; Pulse amplifiers; Time domain analysis; High-power photodetectors; photodetectors; photodiodes; saturation current;
Journal_Title :
Photonics Technology Letters, IEEE
DOI :
10.1109/LPT.2006.877552