1/f noise interpretation of the effect of gate oxide nitridation and reoxidation in dielectric traps

Author

Jayaraman, R. ; Sodini, C.G.

Author_Institution

Dept. of Electr. Eng. & Comput. Sci., MIT, Cambridge, MA, USA

Volume

37

Issue

1

fYear

1990

fDate

1/1/1990 12:00:00 AM

Firstpage

305

Lastpage

309

Abstract

Nitrided gate oxides and reoxidized nitrided gate oxides exhibit increased reliability under electrical and radiation stress and improved dopant barrier properties. However, the process of nitridation introduces oxide charges and traps. In this paper, 1/f noise measurements in MOSFETs and the carrier number fluctuation (McWhorter) model are used to extract the dielectric trap density in space and energy near the conduction and valence band edges of silicon. It is found that reoxidation can be used to reduce nitridation induced interface traps to levels found in oxides

Keywords

electric noise measurement; electron device noise; insulated gate field effect transistors; interface electron states; random noise; semiconductor device models; 1/f noise measurements; MOSFETs; McWhorter model; Si-SiO_xN_y; carrier number fluctuation model; conduction band; dielectric trap density; dopant barrier properties; electrical stress; gate oxide nitridation; nitridation; nitridation induced interface traps; oxide charges; radiation stress; reoxidized nitrided gate oxides; traps; valence band; Annealing; Data mining; Dielectrics; Electron traps; Fluctuations; Noise measurement; Silicon; Software performance; Stress; Voltage;

fLanguage

English

Journal_Title

Electron Devices, IEEE Transactions on

Publisher

ieee

ISSN

0018-9383

Type

jour

DOI

10.1109/16.43833

Filename

43833