Title :
On the effect of hot-carrier stressing on MOSFET terminal capacitances
Author :
Yao, C.T. ; Peckerar, M. ; Friedman, D. ; Hughes, H.
Author_Institution :
Sachs/Freeman Associates, Landover, MD, USA
fDate :
3/1/1988 12:00:00 AM
Abstract :
The hot-carrier effect on the MOSFET is studied by measuring the terminal capacitance of a MOSFET before and after bias voltage stressing. It is concluded that under DC bias stressing, hot electrons are trapped near the drain end of the device. Capacitance observations can be understood in terms of a model in which the trapped-electron distribution peaks very close to the drain-channel metallurgical junction
Keywords :
capacitance; hot carriers; insulated gate field effect transistors; semiconductor device models; semiconductor device testing; DC bias stressing; MOSFET terminal capacitances; bias voltage stressing; drain-channel metallurgical junction; hot electron trapping; hot-carrier stressing; model; trapped-electron distribution; Calibration; Capacitance; Electron traps; Hot carrier effects; Hot carriers; Integrated circuit reliability; Laboratories; MOSFET circuits; Stress; Voltage;
Journal_Title :
Electron Devices, IEEE Transactions on
