• DocumentCode
    976628
  • Title

    High-T0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasers

  • Author

    Tamari, N. ; Shtrikman, H.

  • Author_Institution
    Bell Laboratories, Holmdel, USA
  • Volume
    18
  • Issue
    4
  • fYear
    1982
  • Firstpage
    177
  • Lastpage
    178
  • Abstract
    A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (¿ = 1.3 ¿m) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 ¿m cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ~15 mW/facet, has been realised.
  • Keywords
    III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; InGaAsP laser; crescent shape mesa substrate buried heterostructure laser; high output power; linear light/current characteristics; low threshold current; pulse operation; quaternary lasers; semiconductor laser; single-step liquid phase epitaxy;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820122
  • Filename
    4246299
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976628