Title :
High-T0 low-threshold crescent InGaAsP mesa-substrate buried-heterojunction lasers
Author :
Tamari, N. ; Shtrikman, H.
Author_Institution :
Bell Laboratories, Holmdel, USA
Abstract :
A crescent-shape mesa-substrate buried-heterostructure (CMSB) InGaAsP laser (¿ = 1.3 ¿m) was grown by a single-step liquid phase epitaxy. Threshold current as low as 25 mA with 200 ¿m cavity length under pulse operation and linear light/current characteristics up to five times Ith were obtained. T0 as high as 97°C was achieved for the first time for quaternary lasers. High output power, ~15 mW/facet, has been realised.
Keywords :
III-V semiconductors; gallium arsenide; indium compounds; semiconductor epitaxial layers; semiconductor junction lasers; InGaAsP laser; crescent shape mesa substrate buried heterostructure laser; high output power; linear light/current characteristics; low threshold current; pulse operation; quaternary lasers; semiconductor laser; single-step liquid phase epitaxy;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820122
