Title :
Inversion-mode InP MISFET employing phosphorus-nitride gate insulator
Author :
Kobayashi, T. ; Hirota, Y.
Author_Institution :
NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
Abstract :
A phosphorus-nitride (P3N5) CVD was newly developed for preparation of a high-quality gate insulator on an InP substrate. This film exhibited ohmic conduction with a breakdown field intensity as high as 1×107 V/cm. An inversion-mode n-channel InP MISFET was fabricated employing the phosphorus-nitride CVD film as a gate insulator. An effective electron mobility of 1000¿1640 cm2/Vs was obtained for this device.
Keywords :
CVD coatings; III-V semiconductors; carrier mobility; indium compounds; insulated gate field effect transistors; insulating thin films; phosphorus compounds; CVD film; InP inversion mode MISFET; P3N5 gate insulator; breakdown field intensity; effective electron mobility; n-channel MISFET; ohmic conduction;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820124
