• DocumentCode
    976658
  • Title

    Inversion-mode InP MISFET employing phosphorus-nitride gate insulator

  • Author

    Kobayashi, T. ; Hirota, Y.

  • Author_Institution
    NTT, Musashino Electrical Communication Laboratory, Musashino, Japan
  • Volume
    18
  • Issue
    4
  • fYear
    1982
  • Firstpage
    180
  • Lastpage
    181
  • Abstract
    A phosphorus-nitride (P3N5) CVD was newly developed for preparation of a high-quality gate insulator on an InP substrate. This film exhibited ohmic conduction with a breakdown field intensity as high as 1×107 V/cm. An inversion-mode n-channel InP MISFET was fabricated employing the phosphorus-nitride CVD film as a gate insulator. An effective electron mobility of 1000¿1640 cm2/Vs was obtained for this device.
  • Keywords
    CVD coatings; III-V semiconductors; carrier mobility; indium compounds; insulated gate field effect transistors; insulating thin films; phosphorus compounds; CVD film; InP inversion mode MISFET; P3N5 gate insulator; breakdown field intensity; effective electron mobility; n-channel MISFET; ohmic conduction;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19820124
  • Filename
    4246301
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976658