Title :
Capacitors made by anodisation of aluminium for wideband GaAs ICs
Author_Institution :
Laboratoires d´´Electronique et de Physique Appliquée, Limeil-Brévannes, France
Abstract :
The letter explains first how a capacitor made with anodic oxidations of aluminium can improve the bandwidth of GaAs integrated circuits. The technology of this capacitor is described with emphasis on the crossing of the edge of the capacitor by the upper metallisation. Capacitances of about 1500 pF/mm2 have been obtained with a breakdown voltage in the 5¿10 V region.
Keywords :
III-V semiconductors; anodisation; capacitors; gallium arsenide; integrated circuit technology; metallisation; monolithic integrated circuits; Al; III-V semiconductors; anodic oxidations; bandwidth; breakdown voltage; capacitor; metallisation; wideband GaAs ICs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820135
