DocumentCode :
976783
Title :
Ion-implantation conditions and annealing effects for contiguous disk bubble devices
Author :
Hirko, R. ; Ju, K.
Author_Institution :
IBM Research Laboratory, San Jose, California
Volume :
16
Issue :
5
fYear :
1980
fDate :
9/1/1980 12:00:00 AM
Firstpage :
958
Lastpage :
960
Abstract :
A systematic study of the anisotropy field change ( 
) in magnetic garnet films under various ion-implantation and annealing conditions was performed. For most ions the maximum which could be obtained with the materials used was about 3000 Oe. However for hydrogen ion implantation the measured value showed no such saturation effect up through the highest damage level employed (2.0 eV/Å3) at which point was 16500 Oe. Multiple ion implantation with mixtures of hydrogen and limited amounts of heavier ions (e.g. He or B) yielded values of well beyond the saturation values seen with the heavier ions alone. Post annealing propagation margins of 16% of mid-bias for propagation patterns having a cell size of 30 μm2were measured.
) in magnetic garnet films under various ion-implantation and annealing conditions was performed. For most ions the maximum which could be obtained with the materials used was about 3000 Oe. However for hydrogen ion implantation the measured value showed no such saturation effect up through the highest damage level employed (2.0 eV/Å3) at which point was 16500 Oe. Multiple ion implantation with mixtures of hydrogen and limited amounts of heavier ions (e.g. He or B) yielded values of well beyond the saturation values seen with the heavier ions alone. Post annealing propagation margins of 16% of mid-bias for propagation patterns having a cell size of 30 μm2were measured.Keywords :
Magnetic bubble devices; Magnetic thermal factors; Anisotropic magnetoresistance; Annealing; Garnet films; Hydrogen; Ion implantation; Magnetic anisotropy; Magnetic field measurement; Magnetic materials; Perpendicular magnetic anisotropy; Saturation magnetization;
fLanguage :
English
Journal_Title :
Magnetics, IEEE Transactions on
Publisher :
ieee
ISSN :
0018-9464
Type :
jour
DOI :
10.1109/TMAG.1980.1060787
Filename :
1060787
Link To Document :
