• DocumentCode
    976796
  • Title

    Simple backgated MOSFET structure for dynamic threshold control in fully depleted SOI CMOS

  • Author

    Tarr, N.G. ; Soreefan, R. ; MacElwee, T.W. ; Snelgrove, W.M. ; Bazarjani, S.

  • Author_Institution
    Dept. of Electron., Carleton Univ., Ottawa, Ont., Canada
  • Volume
    32
  • Issue
    12
  • fYear
    1996
  • fDate
    6/6/1996 12:00:00 AM
  • Firstpage
    1093
  • Lastpage
    1095
  • Abstract
    A simple junction-isolated backgate electrode, formed by boron implantation through the buried oxide, is shown to provide effective dynamic control of device thresholds in fully depleted SOI CMOS for ≃1 V power supply operation
  • Keywords
    CMOS integrated circuits; MOSFET; integrated circuit technology; ion implantation; silicon-on-insulator; 1 V; B implantation; Si:B; backgated MOSFET structure; buried oxide; dynamic threshold control; fully depleted SOI CMOS; junction-isolated backgate electrode;
  • fLanguage
    English
  • Journal_Title
    Electronics Letters
  • Publisher
    iet
  • ISSN
    0013-5194
  • Type

    jour

  • DOI
    10.1049/el:19960739
  • Filename
    502872
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=976796