Title :
Large-area wafer processing for 0.78-μm AlGaAs laser diodes
Author :
Nagai, Y. ; Shiba, T. ; Kunitsugu, Y. ; Miyashita, M. ; Karakida, S. ; Watanabe, H. ; Shima, A. ; Nagahama, K. ; Otsubo, M. ; Ikeda, K. ; Susaki, W.
Author_Institution :
Optoelectron. & Microwave Devices R&D Lab., Mitsubishi Electr. Corp., Hyogo, Japan
Abstract :
Large-area wafer processing for buried-ridge loss-guided inner-stripe AlGaAs laser diodes (LD´s) has been developed for the first time. High uniformity of ridge waveguides on a 3-in wafer is realized by introducing selective wet etching. The standard deviations of the ridge width and the remaining p-cladding layer thickness on either side of the ridge, which have a great influence on the device characteristics, are 0.07 μm and 0.01 μm, respectively. As a result, good uniformity of laser characteristics has been obtained, for example, the distribution of full width at half maximum angles of far-field pattern in the direction parallel to the junction plane (/spl theta//sub ///) is only 0.22/spl deg/ (1/spl sigma/) for 1000 chips across a 3-in wafer.
Keywords :
III-V semiconductors; aluminium compounds; etching; gallium arsenide; quantum well lasers; ridge waveguides; semiconductor growth; vapour phase epitaxial growth; waveguide lasers; 0.78 mum; 3 inch; AlGaAs-GaAs; MOCVD epitaxial growth; buried-ridge loss-guided inner-stripe AlGaAs laser diodes; far-field pattern FWHM angle distribution; high power laser diode; large-area wafer processing; p-cladding layer thickness standard deviation; ridge waveguide uniformity; ridge width standard deviation; selective wet etching; triple quantum well SCH active layer; Costs; Diode lasers; Epitaxial growth; Epitaxial layers; Gallium arsenide; Mass production; Molecular beam epitaxial growth; Optical waveguides; Substrates; Wet etching;
Journal_Title :
Photonics Technology Letters, IEEE
