Title :
GaAs/AlGaAs travelling wave electro-optic modulator with an electrical bandwidth >40 GHz
Author :
Spickermann, R. ; Sakamoto, S.R. ; Peters, M.G. ; Dagli, N.
Author_Institution :
Dept. of Electr. & Comput. Eng., California Univ., Santa Barbara, CA, USA
fDate :
6/6/1996 12:00:00 AM
Abstract :
A GaAs/AlGaAs travelling wave Mach-Zehnder electro-optic modulator with novel slow wave electrodes was fabricated on undoped epitaxial layers. The device has a measured electrical bandwidth of >40 GHz at 1.55 μm
Keywords :
III-V semiconductors; Mach-Zehnder interferometers; aluminium compounds; electro-optical modulation; gallium arsenide; slow wave structures; 1.55 micron; 40 GHz; GaAs-AlGaAs; electrical bandwidth; slow wave electrodes; travelling wave Mach-Zehnder electro-optic modulator; undoped epitaxial layers;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19960745
