DocumentCode :
976828
Title :
Novel deposit/spin waveguide interconnection (DSWI) technique for semiconductor integrated optics
Author :
Furuya, K. ; Miller, B.I. ; Coldren, L.A. ; Howard, R.E.
Author_Institution :
Bell Laboratories, Holmdel, USA
Volume :
18
Issue :
5
fYear :
1982
Firstpage :
204
Lastpage :
205
Abstract :
We propose an efficient and simple optical interconnection between active semiconductor components by deposition and spin coating. The demonstration shows a low-threshold (2.0 kA/cm2) and high-coupling (81%) operation of a laser-polyimide/SiO2 slab waveguide integrated on a GaInAsP/InP chip.
Keywords :
III-V semiconductors; aluminium compounds; gallium arsenide; indium compounds; integrated optics; GaInAsP/InP chip; III-V semiconductor; active semiconductor components; deposit/spin waveguide interconnection; deposition; integrated optics; laser-polyimide/SiO2 slab waveguide; optical interconnection; spin coating;
fLanguage :
English
Journal_Title :
Electronics Letters
Publisher :
iet
ISSN :
0013-5194
Type :
jour
DOI :
10.1049/el:19820140
Filename :
4246318
Link To Document :
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