Title :
Calculation of I/V characteristics for ion-implanted GaAs MESFETs
Author_Institution :
British Telecom Research Laboratories, Ipswich, UK
Abstract :
The DC characteristics of an ion-implanted MESFET have been calculated from theoretical and measured carrier concentration profiles. The calculation allows the determination of characteristics for planar or recessed gate structures and shows good agreement with experimental devices.
Keywords :
III-V semiconductors; Schottky gate field effect transistors; gallium arsenide; ion implantation; DC characteristics; I-V characteristics; III-V semiconductor; carrier concentration profiles; ion-implanted GaAs MESFETs;
Journal_Title :
Electronics Letters
DOI :
10.1049/el:19820143
